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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3988 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 25 40 8 150 150 -55~150 ae ae UNIT V V V A A A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 CHARACTERISTICS Tj=25ae unless otherwise specified SYMBOL VCBO VCEO VEBO VCEX(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter sustain voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ; IE=0 IC=5mA ;RBE= IC=1mA ;IC=0 IC=10A;IB1=-IB2=2A; L=200|I H IC=12A IB=2.4A IC=12A IB=2.4A VCB=500V; IE=0 VEB=5V; IC=0 IC=2.4A ; VCE=5V IC=12A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=2.4A ; VCE=10V MIN 800 500 7 500 TYP. MAX UNIT V V V V 1.0 1.5 10 10 15 8 260 18 50 |I |I V V A A pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time 5IB1=-2.5IB2= IC=14A VCCO 200V;RL=14.3| 0.5 3.0 0.3 |I |I |I s s s hFE Classifications L 15-30 M 20-40 N 30-50 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3988 Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) JMnic |
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